2018 6th International Conference on Nano and Materials Science ICNMS 2018
January 15-17, 2018 | Florida Polytechnic University, FL, USA

ICNMS2018 Keynote Speakers

 

 Prof. Ramesh K. Agarwal

Washington University in St. Louis, USA
 

Professor Ramesh K. Agarwal is the William Palm Professor of Engineering in the department of Mechanical Engineering and Materials Science at Washington University in St. Louis. From 1994 to 2001, he was the Sam Bloomfield Distinguished Professor and Executive Director of the National Institute for Aviation Research at Wichita State University in Kansas. From 1978 to 1994, he was the Program Director and McDonnell Douglas Fellow at McDonnell Douglas Research Laboratories in St. Louis. Dr. Agarwal received Ph.D in Aeronautical Sciences from Stanford University in 1975, M.S. in Aeronautical Engineering from the University of Minnesota in 1969 and B.S. in Mechanical Engineering from Indian Institute of Technology, Kharagpur, India in 1968. Over a period of forty years, Professor Agarwal has worked in various areas of Computational Science and Engineering - Computational Fluid Dynamics (CFD), Computational Materials Science and Manufacturing, Computational Electromagnetics (CEM), Neuro-Computing, Control Theory and Systems, and Multidisciplinary Design and Optimization. He is the author and coauthor of over 500 journal and refereed conference publications. He has given many plenary, keynote and invited lectures at various national and international conferences worldwide in over fifty countries. Professor Agarwal continues to serve on many academic, government, and industrial advisory committees. Dr. Agarwal is a Fellow eighteen societies including the Institute of Electrical and Electronics Engineers (IEEE), American Association for Advancement of Science (AAAS), American Institute of Aeronautics and Astronautics (AIAA), American Physical Society (APS), American Society of Mechanical Engineers (ASME), Royal Aeronautical Society, Chinese Society of Aeronautics and Astronautics (CSAA), Society of Manufacturing Engineers (SME) and American Society for Engineering Education (ASEE). He has received many prestigious honors and national/international awards from various professional societies and organizations for his research contributions.

Title of Speech: Design of Metamaterials using Transformation Physics 

Abstract: Metamaterials are rationally designed artificial materials composed of tailored functional building blocks densely packed into an effective (crystalline) material. While metamaterials historically are primarily thought to be associated with negative refractive indices and invisibility cloaking in electromagnetism or optics, it turns out that the simple metamaterial concept also applies to many other areas of physics namely the thermodynamics, classical mechanics (including elastostatics, acoustics, fluid dynamics and elastodynamics) and in principle also to the quantum mechanics. This lecture will review the basic concepts and analogies behind the thermodynamic, acoustic, elastodynamic/elastostatic, and electromagnetic metamaterials and differences among them. It will provide an overview of the theory, the current state of the art and example applications of various types of metamaterials. The review will also discuss the homogeneous as well as inhomogeneous metamaterial architectures designed by coordinate-transformation-based approaches analogous to transformation optics. The application examples will include laminates, thermal cloaks, thermal concentrators and inverters, anisotropic acoustic metamaterials, acoustic free-space and carpet cloaks, and mechanical metamaterials with negative dynamic mass density, negative dynamic bulk modulus, or negative phase velocity. Finally an example of quantum-mechanical matter-wave cloaking will be provided.  

 

 

Prof. Ridha Ben Mrad

University of Toronto, Canada
 

Ridha Ben-Mrad, P.Eng., FCSME, Chief Research Officer and Associate Academic Director of Mitacs (www.mitacs.ca). He is Director of the Mechatronics and Microsystems Group and a Professor in the Department of Mechanical and Industrial Engineering, University of Toronto (www.mie.utoronto.ca). He is also a Co-founder and CTO of Sheba Microsystems Inc. (www.shebamicrosystems.com). He joined the University of Toronto in 1997, having previously held positions at the National Research Council of Canada in Vancouver, BC, and the Ford Research Laboratory in Dearborn, Michigan. R. Ben-Mrad received a PHD in Mechanical Engineering from the University of Michigan, Ann Arbor in 1994. He also received a Bachelor of Science in Mechanical Engineering from Penn State, a Master’s degree in Mechanical Engineering and a Master’s degree in Electrical Engineering both from the University of Michigan, Ann Arbor. R. Ben-Mrad’s research interests are micro-actuators and sensors, MEMS, microfabrication, and development of smart materials based devices. His research led to a number of patents and inventions including 12US, Canadian, European and Chinese patents and more than 160 refereed research publications. He supervised the work of more than 16 PHD students, 38 Master’s students, 14 researchers, 3 Post-Doctoral Fellows, and 64 senior undergraduate students. He received the Faculty Early Career Teaching Award in 2002 and the Connaught Innovation Award in 2013 and in 2014. R. Ben-Mrad currently chairs the IEEE IES Committee on MEMS and Nanotechnology (2015-2016), is Associate Editor of the IEEE Industrial Electronics Tech News (2013-current) and the Journal of Mechatronics (2015-current), serves on the Steering Committee of the IEEE Journal on Micro Electro Mechanical Systems (2010-current) and is a member of the IEEE IES Publication Committee (2013-current). He was the founding Director of the Institute for Robotics and Mechatronics at the University of Toronto (2009-2011) and was Associate Chair of Research of his department (2009-2012).  

 

 

Prof. Sudipta Seal

University of Central Florida, USA
 

Dr. Sudipta Seal joined the Advanced Materials Processing and Analysis Center (AMPAC) and Materials Science & Engineering at the University of Central Florida in 1997. He has been consistently productive in research, instruction and service to UCF since 1998. He has served as NanoInitiative Coordinator for the Vice-President of Research & Commercialization. He is currently the Director of AMPAC and NanoScience Technology Center (NSTC) since 2009. In 2014 Mar, Dr. Seal was appointed Interim Chair of the Materials Science & Engineering Department of CECS. He is a Pegasus Professor and University Distinguished Professor.
He is the recipient of the 2002 Office of Naval Research Young Investigator Award (ONR-YIP). He created the first UCF student chapter of the Electrochemical Society, a century-old society and was honored with the privilege of viewing the ECS historical archives. He's also been selected for the Japan Society of Promotion of Science Award and the Alexander Von Humboldt Fellow, ASM IIM Lecturer award, Royal Soc of Eng - Elected Visiting Professor Fellow at Imperial College of Science, Technology and Medicine, 2009 Invited to the Frontiers of Eng Sym, National Academy of Engineering. He received the Dean's Award for Faculty Excellence (first one) and received both the 2011 UWM CECS Materials Eng Distinguished Alumnus award and UWM GOLD award (alumni of the past decade), Central Florida Engineers Week Award. He is a Fellow of American Soc of Materials (FASM), American Association of Advancement of Science (AAAS), American Vacuum Society (FAVS), Institute of Technology (FIoN), National Academy of Inventors (FNAI), American Institute of Medical and Biological Engineers (FAIMBE).  

 

 

Prof. A. R.Al-Ali

American University of Sharjah, UAE
 

Professor A. R. Al-Ali (SM IEEE) received his Ph.D. in electrical engineering and a minor in computer science from Vanderbilt University, Nashville, TN, USA, 1990; Master degree from Polytechnic Institute of New York, USA, 1986 and B.Sc.EE from Aleppo University, Syria, 1979. From 1991-2000, he worked as an associate /assistant professor in KFUPM, Saudi Arabia. Since 2000 and till now, he has been a professor of computer science and engineering at the American University of Sharjah, UAE. His research and teaching interests include: embedded systems hardware and software architectures, smart homes automations, smart grid evolutions and development, remote monitoring and controlling industrial plants utilizing Internet, GSM, and GPRS networks.
Dr. Al-Ali has more than 100 conference and journal publications including two USA and European Patents. Professor Al-Ali has been invited to deliver keynote speeches on the recent evolution and development in the smart grid in several international conferences.  

Title of Speech: Cyber Physical Systems Role in Manufacturing and Factory Automation 

Abstract: Empowered by the recent development in single system-on-chip, internet of things and cloud computing technologies, cyber physical systems are evolving as a major player during and post manufacturing product process. In additional to its real physical space, products have nowadays a virtual space. A product virtual space is a digital twin that is attached to it to enable manufacturers and their clients to better manufacture, monitor and operate a product during their life time cycles i.e. from the product manufacturing, through operation and to recycling. Each product is equipped with a tiny microcontroller and has a unique WiFi address that allows accessing it anytime and anywhere during its life cycle. This talk will highlight the industry 4.0, role of internet of things and cloud computing in industrial manufacturing and factory automation. 

 

Invited Speaker

 

Prof. Devki N. Talwar

Indiana University of Pennsylvania, USA
 

Dr. Talwar received his B.S. (1968), M.S. (1970) from Agra University and Ph.D (1976) from Allahabad University in India. From 1977-1980, he was a Visiting Scientist at the Commissariat à l'Energie Atomique (CEA), Saclay (France) – came to US as a Visiting Assistant Professor : 1980-1982 – University of Houston and from 1982-1987 – Texas A & M University. In 1987 he joined Physics faculty at Indiana University of Pennsylvania (IUP). Dr. Talwar served as a Chairperson of the IUP Physics Department from 2007 to 2014. During his tenure he was awarded several research grants from various agencies including National Science Foundation (NSF), Research Corporation, US Air Force, American Chemical Society, and National Research Council (NRC). In addition Dr. Talwar received numerous Academic Awards such as the Distinguished University Professorship – a highest honor from IUP faculty/administration. He initiated “Nanotechnology” program at IUP for undergraduates – teaching students how to control semiconductor materials at an atomic scale, exploring their properties and patterning electronic devices on sub-micron scale. Dr. Talwar has published over 140 articles in peer reviewed journals, written 5 book chapters, organized 9 international conferences presented over 60 papers at national and international meetings and given more than 50 invited talks, colloquia all over the world.  

Title of Speech: Novel Nitride-based Quantum-wells and Superlattices 

Abstract: Novel dilute III-V nitride based quantum-wells (QWs) and superlattices (SLs) have recently gained considerable attention among the academic and engineering community. The materials exhibit unusual and fascinating physical properties with a strong band-gap energy bowing effect that allow widely extended band structure engineering applications ranging from telecom lasers to high efficient solar cells. The high interest has also been driven by the potential technological advantages provided by the novel dilute III-V nitrides in lattice matching to GaAs and Si substrates. Currently there is a high demand of the low cost, high performance long wavelength (1.3-1.6 mm) vertical cavity surface-emitting lasers (LW- VCSEL) for the use in the rapid expansion of optical metro area networks. Intensive research efforts on LW-VCSELs have yielded significant results in terms of higher differential efficiency, lower current thresholds, higher operating temperature and high-speed modulation bringing such devices closer to commercial reality. Recent work on GaAs-based lasers with a small amount of nitrogen (dilute III-V-N based materials) has taken advantage of the well-developed GaAs processing techniques and the superior DBR mirror-technology available for the VCSEL operation in the desired long wavelength range. Adding a small amount of N (<5%) to GaAs alloys preserve the direct band gap (has a type-I band offset) and bows the band gap to much lower energies while shrinking the lattice constant. Adding N to GaInAs pushes emission to longer wavelengths and offsets the In lattice mismatch, making higher In concentrations possible. Despite the impressive technological developments and the realization of high efficient solar cells, edge emitting lasers and VCSELs in the 1.1- 1.3 mm wavelength range, many fundamental issues in III-V-N materials have still remain unresolved for producing useful the threshold current density are currently the major challenges. Difficulties still persist in obtaining good quality alloys and the devices still exhibit a high threshold current density. Challenges remain in the understanding of growth and materials’ unusual properties. This work is intended to review the progress made in the growth and characterization of the novel III-V-N based LW-laser material structures. Here we report the results of our recent efforts made both theoretically and experimentally to understand the fundamental material issues related primarily to (i) the N incorporation resulting non-radiative defects; (ii) the limitation on the maximum attainable free-electron and/or hole concentration by doping; (iii) understanding of the formation of intrinsic point- and/or extended-defects and their interaction with the dopants either during epitaxial growth or with the incorporated H in III-V-Ns; (iv) the microscopic nature of N-H complexes responsible for the unusual bandgap increase in hydrogenated III-V-Ns; and (v) accurate knowledge of the dielectric functions and mechanism responsible for the unusual electronic and optical properties of III-V-Ns (e.g., the influence of N and/or disorder), QWs (e.g., the band-edge alignment; inter-diffusion effects, etc.) and SLs.